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SMPS MOSFET
PD - 95479A
IRFP27N60KPBF
Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torqe, 6-32 or M3 screw
HEXFET(R) Power MOSFET
VDSS
600V
RDS(on) typ.
180m
ID
27A
TO-247AC
Max.
27 18 110 500 4.0 30 13 -55 to + 150 300 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns
C
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
530 27 50
Units
mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.29 --- 40
Units
C/W
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1
09/26/05
IRFP27N60KPBF
Static @ TJ = 25C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 600 --- --- 3.0 --- --- --- --- Min. 14 --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.64 180 --- --- --- --- --- Typ. --- --- --- --- 27 110 43 38 4660 460 41 5490 120 250
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 220 m VGS = 10V, ID = 16A 5.0 V VDS = VGS, ID = 250A 50 VDS = 600V, VGS = 0V A 250 VDS = 480V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 16A 180 ID = 27A 56 nC VDS = 480V 86 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 27A ns --- R G = 4.3 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 27A, VGS = 0V TJ = 25C, IF = 27A di/dt = 100A/s
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Symbol IS
ISM
Diode Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- 27 A 110
D
S
VSD trr Q rr IRRM ton Notes:
--- --- 1.5 V --- 620 920 ns --- 11 16 C --- 36 53 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11) IAS = 27A, dv/dt = 13V/ns. (See Figure 12a)
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Starting TJ = 25C, L = 1.4mH, RG = 25,
ISD 27A, di/dt 390A/s, VDD V(BR)DSS,
TJ 150C.
2
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IRFP27N60KPBF
1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
10
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
5.0V
1
1
0.1
0.01
5.0V 20s PULSE WIDTH Tj = 25C
0.1 1 10 100
0.1
0.001
20s PULSE WIDTH Tj = 150C
0.01 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.5
I D = 28A
ID, Drain-to-Source Current ()
100.00
T J = 150C
R DS(on) , Drain-to-Source On Resistance
3.0
2.5
(Normalized)
10.00
2.0
1.00
1.5
T J = 25C
0.10
1.0
0.01 5.0 7.0 9.0
VDS = 100V 20s PULSE WIDTH
11.0 13.0 15.0
0.5
0.0 -60 -40 -20 0 20 40 60 80 100
V GS = 10V
120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFP27N60KPBF
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
12
ID = 28A
VDS = 480V VDS = 300V VDS = 120V
10
10000
Ciss
1000
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
7
Coss
100
5
2
Crss
10 1 10 100 1000
0 0 30 60 90 120 150
VDS , Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
100
I SD , Reverse Drain Current (A)
10
T J 150 C =
10 100sec 1msec 1 Tc = 25C Tj = 150C Single Pulse 10 100 10msec 1000 10000
T J 25 C =
1
0.1 0.2 0.5 0.8
V GS = 0 V
1.1 1.4
0.1
V SD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP27N60KPBF
30
V DS VGS RG
RD
25
D.U.T.
+
20
-VDD
ID , Drain Current (A)
10V
15
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS 90%
5
0 25 50 75 100 125 150
TC , Case Temperature
( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50 0.1 0.20
Thermal Response
0.10 0.05 0.01 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 +TC 1
J = P DM x Z thJC
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP27N60KPBF
950
TOP
760
BOTTOM
ID 13A 18A 28A
EAS , Single Pulse Avalanche Energy (mJ)
15V
570
VDS
L
DRIVER
380
RG
20V
D.U.T
IAS
+ - VDD
A
190
tp
0.01
Fig 12c. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
Starting Tj, Junction Temperature
( C)
Fig 12a. Maximum Avalanche Energy Vs. Drain Current
tp
V(BR)DSS
I AS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
VGS
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit
Fig 13b. Basic Gate Charge Waveform
6
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IRFP27N60KPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFP27N60KPBF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
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Note: "P" in assembly line position indicates "Lead-Free"
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Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/05
8
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